| 摘要 |
PROBLEM TO BE SOLVED: To provide a refreshing method of a semiconductor device such as a VSRAM. SOLUTION: In the semiconductor device 1, a memory cell array 20 is divided into four blocks, i.e., a block (0) 22A, a block (1) 22B, a block (2) 22C and a block (3) 22D. While a data reading or a data writing is conducted in a certain block 22, the refreshing is conducted for the rest of the other blocks 22. Selection of the block (0) 22A to the block (3) 22D is performed by a least significant address signal A0 and an address signal A1 which is one order above the least significant order. Since address signals frequently change as it goes to low-order, continuous delay in refreshing in a certain block 22 is prevented.
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