| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device and its manufacturing method by which the absorption of light can be suppressed on the end face of a resonator. SOLUTION: An InxGa1-xN1-yVy mixed crystal (V: As, P or Sb) or an AlxGa1-xN1-yVy mixed crystal containing at least one element among phosphorus(P), arsenic(As), and antimony(Sb) as V-group element is used in an active layer or an quantum well layer. After the growth of laser structure, an N atom energized by an N2 plasma is given to the end face of a resonator to displace an As atom or a P atom adjacent to the end face thereof with an N atoms, so that the end face is made to be transparent to oscillation wavelength.
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