ION DOPING APPARATUS, THIN FILM SEMICONDUCTOR MANUFACTURED BY USING THE SAME AND DISPLAY

摘要

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to massively dope at once a substrate for large-area display elements or a substrate having connected small-area display elements in an apparatus for doping the substrate with an ion flow accelerated by a high voltage after generating plasma ions. SOLUTION: An ion flow accelerated by a high voltage is formed into a linear shape of an aspect ratio of 1-10000 (10000:1) in section, and a substrate is moved at a speed of 10-1000 mm/sec approximately vertically in the lengthwise direction of the ion flow to dope the substrate.