| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device in which the rising speed of the potential of a power supply node is made fast during a power supply turn-on. SOLUTION: In a VPP generating circuit of DRAM, when a boosting potential VPP is lower than a target potential VT' (=VCC), a standby detector 5 sets a signalϕ5 to an 'H' level, a standby detector 3 is made inactive, a VPP-VCC direct coupled circuit 6 is made active and a boosting potential VPP line and a power supply potential VCC line are coupled. Thus, the rising speed of the boosting potential VPP is made faster during a power supply turn-on.</p> |
