发明名称 MECHANISM FOR MOUNTING WORK TO BE PROCESSED
摘要 <p>PROBLEM TO BE SOLVED: To solve the problem that abnormal discharge is generated between a lower electrode 2 and a part such as a focus ring 2A by generating a potential difference between the lower electrode 2 and the focus ring 2A by the voltage drop of the lower electrode 2 because a detection circuit 8 functions as a discharge circuit while performing plasma processing on a semiconductor wafer in the case of a mechanism for mounting a work to be processed of a separation type as shown in Figure 5, for instance. SOLUTION: The mounting mechanism 10 is provided with an electrostatic chuck 11 as shown in Figure 1, for instance, the lower electrode 12 supporting the electrostatic chuck 11 and comprising aluminum in alumite process, a high frequency power source 14 applying high frequency electric power through a matching circuit 13 on the lower electrode 12, a high voltage power source 16 applying direct current voltage on the electrode plate 11A of the inside of the electrostatic chuck 11, and a detection circuit 18 detecting bias voltage Vdc of the lower electrode 12. A relay switch 18D is provided on the detection circuit 18.</p>
申请公布号 JP2002043402(A) 申请公布日期 2002.02.08
申请号 JP20000224905 申请日期 2000.07.26
申请人 TOKYO ELECTRON LTD 发明人 HIROSE EIJI
分类号 H01L21/302;C23C16/458;H01J37/20;H01J37/32;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 主分类号 H01L21/302
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