| 摘要 |
PROBLEM TO BE SOLVED: To easily verify a parameter for LPE to a transistor grasping a shape when the circuit simulation of a semiconductor is carried out. SOLUTION: TCAD is carried out in a step 51 to prepare a database 52. A net list produced in a step 44 by using the database 52 is verified in a step 53. For instance, TCAD sets a parameter for TCAD so that an electric characteristic is obtained for the transistor 10. By the verification in a step 53, for instance, if drain current obtained from the transistor of the net list produced in a step 44 is matched to the result of the database 52 in a prescribed range, it is advanced to a step 45, and the circuit simulation is carried out. But if they are not matched, a parameter 46 for LPE is renewed.
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