| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the presence of a very small amount of nitride generated on the surface of a silicon wafer at the time of replacing the atmosphere surrounding the silicon wafer with a nitrogen gas atmosphere or exposing the wafer to the atmosphere, while the temperature of the wafer is lowered after the wafer is annealed at a high temperature in a reducing gas atmosphere, such as the hydrogen gas atmosphere, etc., can be evaluated easily and accurately and, in addition, the distribution of the nitrogen in the surface of the wafer can be grasped easily and clearly. SOLUTION: In this method, the presence of the nitride on the surface of the silicon wafer is evaluated by forming a silicon oxide film on the surface of the wafer and measuring the oxide-film withstand voltage characteristic of the thin film.
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