| 摘要 |
PROBLEM TO BE SOLVED: To stably and sufficiently improve a dielectric strength between a base and a collector of a transistor. SOLUTION: This transistor has a base region 3, an emitter region 4, 1st and 2nd collector regions 5 and 6a, and a dielectric strength improving semiconductor region 2. The 2nd collector region 6a is made to face the inner circumference part of the dielectric strength improving semiconductor region 2 with the 1st collector region 5 between them but not to face the outer circumference of the dielectric strength improving semiconductor region 2.
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