MOS FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a MOS field effect transistor with a reduced resistance between a source and a drain. SOLUTION: A gate insulating film 210 and a gate electrode 220 are formed successively on a semiconductor substrate 200. Then a deep source/drain region 230 is formed in the upper region of the semiconductor substrate outside the side wall of the gate electrode. Then an extending source/drain region 240 thinner than the deep source/drain region and extending toward a channel region under the gate electrode is formed in the upper region of the semiconductor substrate. Then a 1st silicide layer 261 with a 1st thickness is formed in the upper surface of the deep source/drain region, and a 2nd silicide layer 262 extending from the 1st silicide layer but with a 2nd thickness thinner than the 1st thickness of the 1st silicide layer is formed in a part of the surface part of the upper part of the extending source/drain region.