发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To set the widths of grooves to such values that do not cause any recess on the surface of a source electrode positioned immediately above the grooves regardless of the withstand voltage needed between a source and a drain. SOLUTION: U-shaped grooves 43 having such widths that do not cause any recess on the surface of the source electrode 52 positioned immediately above the grooves 43 are arranged in a matrix-like state in a square annular plane pattern and base regions 48, back gate regions 49, and source regions 50 are formed in epitaxial layers 44 surrounded and separated by the grooves 43. In addition, P-type field relieving layers 48a formed in the epitaxial layers 44 between the grooves 3 are formed simultaneously with the base regions 48.
申请公布号 JP2002043571(A) 申请公布日期 2002.02.08
申请号 JP20000228017 申请日期 2000.07.28
申请人 NEC KANSAI LTD 发明人 UNO HIROHIKO
分类号 H01L21/336;H01L21/4763;H01L29/06;H01L29/417;H01L29/78;H01L31/119;(IPC1-7):H01L29/78 主分类号 H01L21/336
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