| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a crystalline semiconductor thin film in smaller carrier mobility variation. SOLUTION: The forming method comprises a step for forming a shade film 15 on an amorphous silicon film 12 on a glass substrate 11, for shading the end of this film 12 along the length of a linearly shaped laser beam with the shade film 15, for irradiating the silicon film 12 with the laser by the scan- annealing method to change the amorphous silicon to polysilicon, then for removing the shade film 15, and for irradiating with the laser beam a covered portion of an amorphous silicon film 13 with the shade film 15 to change the amorphous silicon to polysilicon.
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