| 摘要 |
PURPOSE: A method for manufacturing an MOSFET is provided to be capable of obtaining MOSFETs with an asymmetric LDD(Lightly Doped Drain) structure so as to prevent decrease of operating speed. CONSTITUTION: A protrusion part is formed by selectively etching a semiconductor substrate(11). After stacking a gate oxide layer, a doped polysilicon layer(14) and an oxynitride layer(15) on the resultant structure, the oxynitride layer(15), the doped polysilicon layer(14) and the gate oxide layer are sequentially etched by in-situ. An asymmetric LDD region(18) is formed by implanting N- ions. A tungsten silicide spacer(19) is formed at both sidewalls of the doped polysilicon layer(14). Then, N+ regions(20) are formed in the substrate(11).
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