| 摘要 |
A heater block installed within a chamber in the chemical vapor deposition (CVD) apparatus used to manufacture a semiconductor device is described. The heater block includes a catalyst spraying device comprising a support section, an upper plate coupled to an upper portion of the support section and having a projection section at an edge of the upper plate, and a heater installed at prominences and depressions of the upper plate formed of the projection section and constructed so that a wafer can be located on an upper portion of the upper plate. Catalyst is supplied through passages formed within the support section and the upper plate and is uniformly sprayed onto a surface of the wafer via a plurality of spray holes formed at the projection section.
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