| 摘要 |
<p>A method for manufacturing a single-crystal silicon wafer containing oxygen precipitation phase by subjecting a single-crystal silicon wafer containing interstitial oxygen atoms to a heat treatment is characterized by comprising a heat treatment step using a heat treatment furnace of a resistance heating type and a heat treatment step using a rapid heating/quick cooling apparatus. As a result, the silicon single-crystal wafer is provided in its surface layer portion with a DZ layer of a higher quality than that of the prior art and in its bulk portion with oxygen-induced defects of a sufficiently high density. A silicon single-crystal wafer manufactured by the method is also disclosed.</p> |
