发明名称 Semiconductor integrated circuit
摘要 Disclosed is a semiconductor integrated circuit capable of performing a normal operation from immediately after turn-on of power without deteriorating degree of integration. The collector of an NPN bipolar transistor Q1 is connected to a terminal P1 and the emitter of the same is connected to a positive electrode of a reference voltage source 32. The emitter of an NPN bipolar transistor Q2 is connected to the terminal P1 and the collector of the same is connected to the positive pole of the reference voltage source 32. The reference voltage source 32 generates a reference voltage VREF2 from its positive electrode and the negative electrode is connected to the ground. A differentiating circuit constructed by a capacitor C1 and resistors R1 and R2 applies a base potential which makes the NPN bipolar transistors Q1 and Q2 operative in a predetermined period (time determined by the differentiating circuit) immediately after turn-on of power and, after elapse of the predetermined time, applies a base potential at a ground level.
申请公布号 US2002014911(A1) 申请公布日期 2002.02.07
申请号 US20000739775 申请日期 2000.12.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NAKANO TOSHIYA
分类号 H01L21/8222;G05F1/10;G05F3/22;H01L27/06;H03F3/45;(IPC1-7):G05F1/10 主分类号 H01L21/8222
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