| 摘要 |
The first Al-based target material for sputtering contains 0.01-10 atomic % of at least one intermetallic compound-forming element, and an intermetallic compound having a maximum diameter of substantially 50 mum or less. The second Al-based target material for sputtering has a microstructure comprising an alloy phase containing 20 atomic % or less of the intermetallic compound-forming element and Al and an Al matrix phase comprising substantially pure Al, the maximum diameter of the intermetallic compound in the alloy phase being substantially 50 mum or less. The content of the intermetallic compound forming element based on the whole structure is 0.01-10 atomic %. These target materials are produced by pressure-sintering a rapid solidification powder at 400-600° C. After the pressure sintering, the target material is preferably hot-rolled at 400-600° C.
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