发明名称 Sputtering system, sputtering support system and sputtering control method
摘要 The present invention is characterized by; detecting the volume of impurities in said vacuum vessel wherein plasma is generated by radio frequency power supplied to the target electrode and substrate electrode, and a target is sputtered by ions in said plasma, thereby forming films on the substrate, and controlling the phase difference of radio frequency power supplied to each of said electrodes according to said detection value.
申请公布号 US2002014402(A1) 申请公布日期 2002.02.07
申请号 US20010791617 申请日期 2001.02.26
申请人 NAGAMINE YOSHIHIKO;HIGUCHI YOSHIYA;SATO TADASHI;SEINO TOMOYUKI;KAMEI MITSUHIRO 发明人 NAGAMINE YOSHIHIKO;HIGUCHI YOSHIYA;SATO TADASHI;SEINO TOMOYUKI;KAMEI MITSUHIRO
分类号 C23C14/34;C23C14/54;H01J37/32;(IPC1-7):C23C14/34 主分类号 C23C14/34
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