| 摘要 |
Disclosed is a scanning exposure method, in which, when a pattern formed on a mask is transferred onto a wafer via an optical projection, the projecting region of the mask is limited by a slit, and the mask and the wafer are scanned in synchronism with the slit fixed so as to transfer the entire pattern region of the mask onto the wafer. In the scanning exposure method of the present invention, the exposure of the entire mask by the scanning of mask and the wafer is carried out twice by changing the exposure conditions. The first exposure and the second exposure are made opposite to each other in the scanning direction of the mask and the wafer so as to improve the pattern transfer accuracy.
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