发明名称 |
Method and apparatus for forming deposited film |
摘要 |
A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.
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申请公布号 |
US2002015802(A1) |
申请公布日期 |
2002.02.07 |
申请号 |
US20010800724 |
申请日期 |
2001.03.08 |
申请人 |
OZAKI HIROYUKI;KANAI MASAHIRO;OKADA NAOTO;MORIYAMA KOICHIRO;SHIMODA HIROSHI |
发明人 |
OZAKI HIROYUKI;KANAI MASAHIRO;OKADA NAOTO;MORIYAMA KOICHIRO;SHIMODA HIROSHI |
分类号 |
C23C16/50;C23C16/511;C23C16/52;C23C16/54;H05H1/24;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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