发明名称 |
Method of manufacturing a contact hole of a semiconductor device |
摘要 |
A spacer is formed on a side wall of a gate electrode formed over a substrate, and a dielectric interlayer is then formed over the substrate, the gate electrode and the spacer. A region of the dielectric interlayer is then subjected to a first etching process using an etching gas. An emission amount of a chemical compound emitted during the first etching process is detected, where the chemical compound is produced by a chemical reaction of the etching gas and the spacer. The region of the dielectric interlayer is then subjected to a second etching process upon detecting that the emission amount of the chemical compound has reached a given level. The second etching process may be continued until a contact hole is defined in the dielectric interlayer.
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申请公布号 |
US2002016077(A1) |
申请公布日期 |
2002.02.07 |
申请号 |
US20010915520 |
申请日期 |
2001.07.27 |
申请人 |
HWANGBO YOUNG;KIM DONG-YUN;LEE HYUCK-JUN |
发明人 |
HWANGBO YOUNG;KIM DONG-YUN;LEE HYUCK-JUN |
分类号 |
H01L21/28;H01L21/311;H01L21/60;H01L21/66;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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