| 摘要 |
The invention relates to an assembly comprising a magnetotransistor with a doped semiconductor substrate (10) and a layer sequence of doped semiconductor layers (12, 14, 18, 16) applied to the doped semiconductor substrate (10). Electrical contacts are available on the surface of the assembly so that at least two transistors can be produced with said assembly. A first region (16) on the surface of the assembly having a first kind of dopant (n or p) is embedded in a second region (18) on the surface of the assembly having a second kind of dopant (p or n). The second region (18) having the second kind of dopant (p or n) is embedded in a third region (14) on the surface of the assembly having the first kind of dopant (n or p) and the first kind of dopant (n or p) differs from the second kind of dopant (p or n). The invention further relates to a method for producing an assembly according to the invention and to a method for measuring a magnetic field.
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