| 摘要 |
PURPOSE: A method for forming a ferroelectric capacitor is provided to prevent a drop in characteristics of a ferroelectric layer due to the formation of a titanium nitride hard mask and also to prevent a damage of an upper electrode due to the removal of the titanium nitride hard mask. CONSTITUTION: The method is characterized by the use of a polysilicon hard mask(27A). After the first conductive layer(24) for a lower electrode, the ferroelectric layer(25), and the second conductive layer(26A) for the upper electrode are sequentially formed on an interlayer dielectric(23), a non-doped polysilicon layer(27A) is formed thereon as the hard mask. The second conductive layer(26A) is then etched to form the upper electrode. Next, after a photoresist pattern(PR2) is formed thereon, the ferroelectric layer(25) and the first conductive layer(24) are etched through the photoresist pattern(PR2) to form the ferroelectric pattern and the lower electrode. The photoresist pattern(PR2) is then removed.
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