| 摘要 |
PURPOSE: A method for forming a tungsten plug of a semiconductor device is provided to prevent an abnormal profile of the tungsten plug caused by a key hole occurring in a tungsten layer. CONSTITUTION: A planarized interlayer dielectric(31) is formed on a silicon substrate(30) and then selectively etched to form a contact hole. Next, a barrier metal layer(32) is formed along the entire surface, and then the tungsten layer(33) is deposited to fill the contact hole. Here, the key hole is produced in the tungsten layer(33) within the contact hole. Next, a photoresist layer(34) is coated on the tungsten layer(33) so as to fill the key hole. The photoresist layer(34) and the tungsten layer(33) are then etched back to form the tungsten plug. Instead of using the photoresist layer(34), polymer can be deposited or alternatively the surface of the tungsten layer(33) can be oxidized to fill up the key hole.
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