发明名称 High temperature sensor
摘要 High temperature substance sensor, including a substrate (4), a device (6) for raising and maintaining the temperature of the sensor, and a layer like capacitor structure (38) with structure sizes smaller than 50 mum, upon which a functional layer (18) is applied. In accordance with the invention the layer-like capacitor structure (38) is produced by the following: application of a complete or already pre-structured electrically conductive layer as precursor of the capacitor structure (38) using a thick layer technique, structuring the electrically conductive layer using a photolithographic structuring process.
申请公布号 US2002014107(A1) 申请公布日期 2002.02.07
申请号 US20010896286 申请日期 2001.06.29
申请人 MOOS RALF;BIRKHOFER THOMAS;MAUNZ WERNER;MULLER RALF;MULLER WILLI;PLOG CARSTEN 发明人 MOOS RALF;BIRKHOFER THOMAS;MAUNZ WERNER;MULLER RALF;MULLER WILLI;PLOG CARSTEN
分类号 G01N27/22;(IPC1-7):G01N9/00;G01N7/00 主分类号 G01N27/22
代理机构 代理人
主权项
地址