发明名称 |
Chemical vapor deposition system for polycrystalline silicon rod production |
摘要 |
Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the "skin effect."
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申请公布号 |
US2002014197(A1) |
申请公布日期 |
2002.02.07 |
申请号 |
US20010842276 |
申请日期 |
2001.04.24 |
申请人 |
KECK DAVID W.;RUSSELL RONALD O.;DAWSON HOWARD J. |
发明人 |
KECK DAVID W.;RUSSELL RONALD O.;DAWSON HOWARD J. |
分类号 |
C23C16/24;C23C16/44;(IPC1-7):C30B23/06;C30B25/10;C30B28/12;C30B28/14 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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