发明名称 Method of manufacturing a non-single-crystal thin film solar cell
摘要 An n layer, an i layer and a p layer are laminated, in that order, in a non-single-crystal thin film solar cell. The n layer, a part thereof, or a part of the n layer and the i layer, is formed at a low substrate temperature T1. The i layer and the p layer; the residual n layer, i layer and p layer; or the residual i layer and p layer, are formed at a higher substrate temperature T2 than T1. More particularly, T1 is between about 70° C. and 120° C, and T2 is between about 120° C and 450° C.
申请公布号 US2002014263(A1) 申请公布日期 2002.02.07
申请号 US20010883537 申请日期 2001.06.18
申请人 SASAKI TOSHIAKI 发明人 SASAKI TOSHIAKI
分类号 C23C16/24;H01L21/205;H01L31/00;H01L31/036;H01L31/04;(IPC1-7):H01L31/00 主分类号 C23C16/24
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