| 摘要 |
When a semiconductor element (1) is bonded to an inner lead (6) of a tape carrier (5), a problem of an operation failure of the semiconductor element (1) that would be caused from result of an excessive amount of an alloy layer (9) flowing toward and coming into contact with an edge portion of the semiconductor element (1) is solved. In an electronic component device in which a metal ball formed by melting a tip end of a metal wire (12) is bonded onto an electrode (2) of the semiconductor element (1) so as to form a bump (11), a plated layer is formed on the surface of the inner lead (6) of the tape carrier (5), and under the condition that the inner lead (6) is positioned in alignment with the bump (11), the plated layer is melted in order that the semiconductor element (1) is bonded to the inner lead (6) through an alloy layer (9), a plurality of bumps (11) are formed on the electrode (2) so as to increase a force to hold the alloy layer (9) and to prevent the alloy layer (9) from flowing therefrom.
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