| 发明名称 |
Low voltage flash EEPROM memory cell with improved data retention |
| 摘要 |
The present invention provides memory circuit including a control input, a switch, and a voltage transfer structure including a linear capacitor that electrically couples the control input to the switch.
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| 申请公布号 |
US2002015327(A1) |
申请公布日期 |
2002.02.07 |
| 申请号 |
US20010957124 |
申请日期 |
2001.09.20 |
| 申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
MCPARTLAND RICHARD J.;SINGH RANBIR |
| 分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/04 |
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