| 发明名称 |
METHOD OF FORMING THIN FILM FOR INTEGRATED CIRCUIT FABRICATION PROCESS, AND DEVICE FABRICATION METHOD THEREBY AND COMPUTER STORAGE MEDIA |
| 摘要 |
PURPOSE: A method of forming TaN films is provided to achieve good step coverage and low resistivity. CONSTITUTION: A wafer processing system(10) comprises a process chamber(100), a gas panel(130), a control unit(110), along with other hardware components such as power supplies(106) and vacuum pumps. The tantalum nitride(TaN) compound layer is formed by thermally decomposing a tantalum containing metal organic precursor. After the tantalum nitride (TaN) compound layer is formed, it is plasma treated.
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| 申请公布号 |
KR20020011126(A) |
申请公布日期 |
2002.02.07 |
| 申请号 |
KR20010046368 |
申请日期 |
2001.07.31 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
ITOH TOSHIO;MARCADAL CHRISTOPHE;YANG MICHAEL X. |
| 分类号 |
C23C16/34;H01L21/205;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/34 |
| 代理机构 |
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