A method of producing thin silicon films

摘要

A method of producing thin single crystal silicon films (5). The method includes forming a single crystal substrate (1), depositing or forming a thin single crystal silicon film (5) having the same crystal orientation as said substrate in, on or adjacent to the substrate (1) and providing a plurality of spaced apart etchant access regions (6) through the film (5) or substrate (1). Liftoff of the film (5) is effected by simultaneous etching via the etchant access regions (6). The amount of etching required and the degree of access for etchant provides for detachment without significant degradation of film (5).