| 摘要 |
In the light exposure step of the device pattern, the monitor region is exposed to light together with the device region for every chip, and chip {circle over (4)} within the wafer, the chip {circle over (4)} having the focus conditions in the light exposure step close to a set value and having an average value of the dose, is extracted after the light exposure of the device pattern and before the developing treatment. The monitor region arranged within the extracted chip {circle over (4)} is irradiated with light during the development of the resist, and the stopping time of the development for finishing the device pattern in a desired size is estimated on the basis of the change in the intensity of the reflected light of the monitor region. Further, a developing solution is supplied onto the wafer during the estimated stopping time of the development so as to stop the development.
|
