| 摘要 |
Low hydrogen-content silicon nitride materials are deposited by a variety of CVD techniques, preferably thermal CVD and PECVD, using chemical precursors that contain silicon atoms, nitrogen atoms, or both. A preferred chemical precursor contains one or more N-Si bonds. Another preferred chemical precursor is a mixture of a N-containing chemical precursor with a Si-containing chemical precursor that contains less than 9.5 weight % hydrogen atoms. A preferred embodiment uses a hydrogen source to minimize the halogen content of silicon nitride materials deposited by PECVD.
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