发明名称 THIN CAPACITIVE STRUCTURES AND METHODS FOR MAKING THE SAME
摘要 A capacitor and a method of making the capacitor is provided. The capacitor includes a metallization line with a high dielectric constant layer defined over the metallization line. A thin metallization film is defined over the high dielectric constant layer, such that the thin metallization film defines a top plate of the capacitor, the high dielectric constant layer defines a dielectric for the capacitor, and the metallization line defines a bottom plate for the capacitor. The metallization line is defined from a metallization level and the thin metallization film is defined before a next metallization level above the metallization level is defined.
申请公布号 WO0147000(A3) 申请公布日期 2002.02.07
申请号 WO2000US41627 申请日期 2000.10.26
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS SEMICONDUCTORS, INC. 发明人 BOTHRA, SUBHAS;PRAMANIK, DIPANKAR;GABRIEL, CALVIN, T.
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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