发明名称 |
THIN CAPACITIVE STRUCTURES AND METHODS FOR MAKING THE SAME |
摘要 |
A capacitor and a method of making the capacitor is provided. The capacitor includes a metallization line with a high dielectric constant layer defined over the metallization line. A thin metallization film is defined over the high dielectric constant layer, such that the thin metallization film defines a top plate of the capacitor, the high dielectric constant layer defines a dielectric for the capacitor, and the metallization line defines a bottom plate for the capacitor. The metallization line is defined from a metallization level and the thin metallization film is defined before a next metallization level above the metallization level is defined.
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申请公布号 |
WO0147000(A3) |
申请公布日期 |
2002.02.07 |
申请号 |
WO2000US41627 |
申请日期 |
2000.10.26 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS SEMICONDUCTORS, INC. |
发明人 |
BOTHRA, SUBHAS;PRAMANIK, DIPANKAR;GABRIEL, CALVIN, T. |
分类号 |
H01L21/02;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/02 |
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