MOS vertical transistor for LV applications has polycrystalline drain electrode in window of insulation layer on one side of semiconductor body and gate electrode within insulation layer on its opposite side

摘要

The transistor has a semiconductor body (1) incorporating a source zone (3) of opposite conductivity type at one major surface (2) and provided with an insulation layer (9) having a window (10) at its opposing major surface (8). The window is used for provision of a polycrystalline drain electrode (11,12), aligned with a zone (7) of opposite type extending between the opposing surfaces, with a gate electrode (6) incorporated in an insulation layer (5) applied to the first major surface.