发明名称 METHOD FOR CUTTING OUT AT LEAST A THIN LAYER IN A SUBSTRATE OR INGOT, IN PARTICULAR MADE OF SEMICONDUCTOR MATERIAL(S)
摘要 The invention concerns a method for cutting out at least a thin layer in an element forming a substrate or an ingot for electronic or optoelectronic or optical component or sensor. The invention is characterised in that it comprises steps which consist in: forming in said element a embrittled zone having a thickness corresponding to that of the layer to be cut out; injecting into said element an energy pulse lasting not more than the duration required for a sound wave to pass through the thickness of the zone absorbing said pulse energy, said pulse having an energy selected to cause cleaving at said embrittled layer.
申请公布号 WO0180308(A3) 申请公布日期 2002.02.07
申请号 WO2001FR01179 申请日期 2001.04.17
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ROCHE, MICHEL 发明人 ROCHE, MICHEL
分类号 H01L21/304;B23K26/40;H01L21/301;H01L21/762 主分类号 H01L21/304
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