发明名称 |
METHOD FOR CUTTING OUT AT LEAST A THIN LAYER IN A SUBSTRATE OR INGOT, IN PARTICULAR MADE OF SEMICONDUCTOR MATERIAL(S) |
摘要 |
The invention concerns a method for cutting out at least a thin layer in an element forming a substrate or an ingot for electronic or optoelectronic or optical component or sensor. The invention is characterised in that it comprises steps which consist in: forming in said element a embrittled zone having a thickness corresponding to that of the layer to be cut out; injecting into said element an energy pulse lasting not more than the duration required for a sound wave to pass through the thickness of the zone absorbing said pulse energy, said pulse having an energy selected to cause cleaving at said embrittled layer. |
申请公布号 |
WO0180308(A3) |
申请公布日期 |
2002.02.07 |
申请号 |
WO2001FR01179 |
申请日期 |
2001.04.17 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ROCHE, MICHEL |
发明人 |
ROCHE, MICHEL |
分类号 |
H01L21/304;B23K26/40;H01L21/301;H01L21/762 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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