发明名称 Improved amplifier gain-boosting circuit
摘要 <p>An amplifier gain-boosting circuit comprises first and second field effect transistors with the source of the first field effect transistor (Nc) being connected to the drain of the second field effect transistor (N1) so as to form a cascode amplifier stage, a first voltage input being connected to the gate of the second field effect transistor. A discrete time integrator (20) is connected between the gate of the first field effect transistor and the drain of the second field effect transistor, and a second reference voltage input is connected to the integrator whereby the drain voltage of the second transistor is forced by the said integrator to follow a reference voltage applied to the reference voltage input thereof when an input signal is applied to the first voltage input. The invention is particularly suitable for use in low-power switched capacitor circuits. &lt;IMAGE&gt;</p>
申请公布号 EP1178602(A1) 申请公布日期 2002.02.06
申请号 EP20000402233 申请日期 2000.08.04
申请人 MOTOROLA, INC. 发明人 OLIAEI, OMID
分类号 H03F1/22;(IPC1-7):H03F1/22 主分类号 H03F1/22
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