| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for silica film formation capable of sintering in a short time, and excellent in cracking resistance and moisture absorption property as an interlayer insulating material for a semiconductor element, etc., and a silica film. SOLUTION: This composition for film formation contains a compound (A) prepared by hydrolyzing and condensating at least a compound selected from the group represented by general formulae RaSi(OR1)4-a....(1), Si(OR2)4....(2) and R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c....(3), in the presence of a metal chelating compound and/or an alkali catalyst, an alkali compound (B), and an organic solvent (C). In the formula, R is H, F, or a monovalent organic group, R1 to R6 are each a monovalent organic group, R7 is O, a phenylene group, or -(CH2)n-, a is an integer of 1-2, b and c are each a number of 0-2, d is a number of 0 or 1, and n is an integer of 1-6.
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