| 摘要 |
<p>PROBLEM TO BE SOLVED: To actualize an increase in aperture rate and a decrease in source wire resistance and to prevent source-common capacity from increasing by removing a semiconductor layer which projects from the side of a source wire. SOLUTION: When a contact hole is formed by removing part of a protection film, the protection film on the source wire, the protection film by the source wire, and the gate insulating film by the source wire are removed at the same time and the part of the exposed semiconductor layer which projects from the side of the source wire is removed by using as a mask a resist pattern for removing part of the protection film and/or the source wire.</p> |
