SEMICONDUCTOR PRESSURE SENSOR AND METHOD OF MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor having an enhanced breakdown strength level and a method of manufacturing it. SOLUTION: In the semiconductor pressure sensor, a glass base 6 formed with a through hole 13 serving as a pressure introduction hole is joined to the back face of a pressure sensor chip 11 having a recess part 3 formed in the back face to form an approximately rectangular thin-walled deflecting part 2 in the center of its front face, and having a pressure-sensitive element R for detecting deformation of the deflecting part 2, with the opening of the through hole 13 enclosed within the open face of the recess part 3. The end edge of the recess part 3 making contact with the mating surfaces 5 of the pressure sensor chip 11 and the glass base 6 is approximately circular on plan view. A method of manufacturing the semiconductor pressure sensor is also described.