| 摘要 |
PROBLEM TO BE SOLVED: To provide an efficient method of setting the positions of the gage resistances of a semiconductor pressure sensor, for reducing the pressure nonlinearity, NLP, of the sensor characteristic. SOLUTION: The method of setting the positions of the plurality of gage resistances 41 to 44 in the semiconductor pressure sensor S1 having a diaphragm 3 formed on one side of a semiconductor substrate 1 for detecting pressure and the plurality of gage resistances 41 to 44 arranged on the diaphragm 3, with the resistance values of the resistances being varied by the effect of piezoelectric resistance. The method involves determining, through finite element analysis, the relationship between the position and rate of change of resistance value of each individual gage resistance, to set the positions of the plurality of gage resistances such that the gage resistances RA and RB differing the direction of variation in resistance values assume positions where the rates of change of their resistance values are approximately equal. During the finite element analysis, the positions of the plurality of gage resistances are set while allowing for the nonlinearity errors of the resistance values with respect to pressures.
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