发明名称 METHOD AND APPARATUS FOR PRETREATMENT FOR ANALYSIS OF IMPURITIY ON SURFACE OF SEMICONDUCTOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and an apparatus, for a pretreatment of impurities analysis on the surface of a semiconductor, where the impurities in a prescribed place on a semiconductor wafer can be collected, by preventing creepage of contamination from the air and humans. SOLUTION: A collection tube 10, which has a lid 15 on the bottom face 13 of a cylindrical body 14 and on which a plurality of cutouts 11 are formed in the cylindrical body 14 by a prescribed distance from the bottom face 13, is used. The collection tube 10 is pressed to the surface of the semiconductor; respective pieces 12 in the lower part of the collection tube are expanded from the cutouts 12; a medium which contains the impurities on the surface of the semiconductor is collected from their gaps 16; the collection tube is lifted; and the lid 15 is closed.</p>
申请公布号 JP2002039928(A) 申请公布日期 2002.02.06
申请号 JP20000219583 申请日期 2000.07.19
申请人 NEC CORP 发明人 SHIROMIZU YOSHIMI
分类号 G01N23/223;G01N1/28;G01N23/225;G01N27/62;G01N33/00;(IPC1-7):G01N1/28 主分类号 G01N23/223
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