发明名称 SILICA-BASED COATING FILM AND SEMICONDUCTOR DEVICE HAVING THE SILICA-BASED COATING FILM
摘要 PROBLEM TO BE SOLVED: To provide a silica-based coating film excellent in adhesive properties (particularly, adhesive properties in the CMP process) and a semiconductor device which causes less delay of signals and is of a high quality and a high reliability. SOLUTION: There are provided a silica-based coating film of which the surface has a critical surface tension of 29×10-3 N/m or more, and which is formed by coating and drying a coating fluid for forming the silica-based coating film comprising a polysiloxane, which has a substituting group having an unsaturated bond and a substituting group having no unsaturated bond, and an organic solvent, and a semiconductor device in which the silica-based coating film is used as an interlaminar insulating film for multilayer interconnection.
申请公布号 JP2002038091(A) 申请公布日期 2002.02.06
申请号 JP20000228072 申请日期 2000.07.28
申请人 HITACHI CHEM CO LTD 发明人 SAKURAI HARUAKI;ABE KOICHI;TERADA NOBUKO;NOBE SHIGERU;ENOMOTO KAZUHIRO
分类号 C09D183/07;C09D5/00;C09D183/04;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):C09D183/07 主分类号 C09D183/07
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