发明名称 SPUTTERING TARGET MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a target material with a little generation of a particle. SOLUTION: The sputtering target material is characterized by consisting of titanium, by its sputtering face and side being acid etched, preferably by being used for a film forming of titanium nitride, and preferably by that the mean surface roughness is 0.01-3μm and its deviation on the sputtering face is 30% or less.
申请公布号 JP2002038259(A) 申请公布日期 2002.02.06
申请号 JP20000222174 申请日期 2000.07.24
申请人 HONEYWELL ELECTRONICS JAPAN KK 发明人 YO RIKIGUN;UEDA TADAO;AIHARA TOSHIO;HISHITANI YASUHISA;KANEFUJI SHINSAKU
分类号 C23C14/34;C22C14/00;C23C14/06;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/34
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