发明名称 |
SPUTTERING TARGET MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a target material with a little generation of a particle. SOLUTION: The sputtering target material is characterized by consisting of titanium, by its sputtering face and side being acid etched, preferably by being used for a film forming of titanium nitride, and preferably by that the mean surface roughness is 0.01-3μm and its deviation on the sputtering face is 30% or less.
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申请公布号 |
JP2002038259(A) |
申请公布日期 |
2002.02.06 |
申请号 |
JP20000222174 |
申请日期 |
2000.07.24 |
申请人 |
HONEYWELL ELECTRONICS JAPAN KK |
发明人 |
YO RIKIGUN;UEDA TADAO;AIHARA TOSHIO;HISHITANI YASUHISA;KANEFUJI SHINSAKU |
分类号 |
C23C14/34;C22C14/00;C23C14/06;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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