| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of detecting the contact resistance value between an external terminal and an external pin. SOLUTION: A high-speed SDRAM is provided with a contact resistance detecting circuit 14.1 for detecting the contact resistance value R between a socket and an external pin 12.1. At testing times, a power source potential VCC is provided for the socket, and a current flowing through N-channel MOS transistors 25 and 26 is compared with a constant current flowing through N-channel MOS transistors 27 and 28. On the basis of the results of the comparison, a signal VO1 of the level corresponding to the contact resistance value R is outputted.
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