| 摘要 |
A lateral MOSFET (100) and a method for making the same. A two layer raised source/drain region (106) is located adjacent a gate structure (112). The first layer of the raised source drain is initially doped p-type and the second layer of the raised source/drain region is doped n-type. P-type dopants from first layer are diffused into the substrate to form a pocket barrier region (105). N-type dopants from second layer diffuse into first layer so that it becomes n-type and into the substrate to form source/drain junction regions (104) . P-type pocket barrier region (105) thus provides a barrier between the source/drain junction regions (104) and the channel region (108). <IMAGE> |
