发明名称 METHOD FOR MANUFACTURING FINE CONDUCTIVE LAYER PATTERN
摘要 PURPOSE: A method for manufacturing a fine conductive layer pattern is provided to form neighboring fine patterns having a thin insulation layer interposed between the fine patterns, by not relying on the capacity of a stepper. CONSTITUTION: The first pattern is formed on a substrate. An insulation layer is formed on the sidewall of the first pattern. A patterning target layer is formed on the resultant structure. The patterning target layer is eliminated until the patterning target layer has the same height as the first pattern. An etch mask covering the patterning target layer and the first pattern is formed. The patterning target layer not covered with the etch mask is etched to form the second pattern adjacent to the first pattern while interposing the insulation layer between the first and second patterns.
申请公布号 KR20020010826(A) 申请公布日期 2002.02.06
申请号 KR20000044321 申请日期 2000.07.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, DAE YEONG;YOON, HUI YONG
分类号 H01L21/8239;(IPC1-7):H01L21/823 主分类号 H01L21/8239
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