| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to embody a device having different threshold voltages by forming a selective epitaxial silicon layer in a channel region of a low threshold voltage device, and to prevent damage to a semiconductor substrate by performing a gate oxide process once. CONSTITUTION: A sacrificial insulation layer is formed on a semiconductor substrate(31). A photoresist layer exposing a part of the semiconductor substrate where the low threshold voltage device is to be formed, is formed on the sacrificial insulation layer. After the photoresist layer is removed, the epitaxial silicon layer(39) as the channel layer of the low threshold voltage device is formed on the exposed semiconductor substrate. A gate oxide layer(40) is formed on the entire surface including the epitaxial silicon layer. A gate electrode(41) of the low threshold voltage device and a high threshold voltage device is formed on the gate oxide layer.
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