发明名称 METHOD AND DEVICE FOR INSPECTING WAFER SHAPE
摘要 PROBLEM TO BE SOLVED: To provide a method and a device for wafer shape inspection which quantitatively evaluate the shape of a semiconductor wafer in three dimensions with high inspection precision. SOLUTION: The outer peripheral part of a silicon wafer W is sucked by a 2nd vacuum pump P2 to the stage surface of a vacuum chuck disk 11 and the silicon wafer W is temporarily fixed. Then fine unevenness appearing on the surface of the silicon wafer W, the wafer outer peripheral part shape, etc., are inspected. Thus, the wafer W is inspected while temporarily fixed to the stage surface, so the inspection is hardly affected by vibration propagated from the wafer shape inspecting device and the wafer W can be inspected in a free posture. Consequently, the shape of the wafer W can quantitatively be evaluated in three dimensions with high inspection precision. Further, the ordinary inspection of a wafer reverse surface standard can be performed.
申请公布号 JP2002039745(A) 申请公布日期 2002.02.06
申请号 JP20000228259 申请日期 2000.07.28
申请人 MITSUBISHI MATERIALS SILICON CORP 发明人 KAWAI SHINICHI
分类号 G01B11/30;G01B21/00;G01B21/30;G01N21/84;H01L21/66;(IPC1-7):G01B21/30 主分类号 G01B11/30
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