| 摘要 |
PROBLEM TO BE SOLVED: To provide an impurity-added diamond thin film production method which has a easy operation in production without using poisonous gas and controls the amount of addition of impurities readily and diversifies the kind of impurities to be added as well and also to provide an apparatus of producing it. SOLUTION: In this impurities added-diamond thin film production, a microwave sent through a microwave waveguide 3 from a microwave power source 2 makes plasma in a reaction pipe 1 in which internal atmosphere is a low- pressure methane.hydrogen mixture gas. Thus, a diamond thin layer is formed on a substrate 7 and a voltage given by a bias impression device 12 is impressed between the substrate 7 and an impurities content conductor 10 during the growing of the diamond thin film.
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