发明名称 APPARATUS FOR GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To stably grow a single crystal rod without damaging the crystal habit line of the single crystal rod, causing deformation and delamination due to the weight of the rod, even when it is as heavy as 400 kg and causing dislocation due to the damage of the crystal habit line in a constitution where the bottom of the bulged portion of the single crystal rod formed by CZ method is supported. SOLUTION: Contact members 9A and 9B whose surface hardness is not less than 70 in terms of Shore hardness and not more than 100 in terms of Vickers harness and total tensile strength of not less than 120 MPa and not more than 250 MPa are arranged at the contact area of the crystal and the support members 8A and 8B which supports the bottom of the bulged portion 4 of the single crystal formed underneath the seed crystal.
申请公布号 JP2002037693(A) 申请公布日期 2002.02.06
申请号 JP20000224291 申请日期 2000.07.25
申请人 SUPER SILICON KENKYUSHO:KK 发明人 YAMAGISHI HIROTOSHI
分类号 C30B15/30;(IPC1-7):C30B15/30 主分类号 C30B15/30
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